Microsemi Corp. TRANSISTORS - RF Transistors (BJT) - MS2207 MS2207

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1079828-MS2207 Packaging: Bulk Mounting: Chassis Mount Gain: 8dB Frequency - Transition: 1.09GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 250°C (TJ) Case / Package: M216 Maximum Current Collector: 24A VCEO Maximum Collector-Emitter Breakdown Voltage: 65V Typical Gain (hFE) (Min): 10 @ 5A, 5V Maximum Power Dissipation: 880W Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - RF Transistors (BJT) - MS2207 - 1079828-MS2207 - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - MS2207 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1079828-MS2207 Packaging: Bulk Mounting: Chassis Mount Gain: 8dB Frequency - Transition: 1.09GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 250°C (TJ) Case / Package: M216 Maximum Current Collector: 24A VCEO Maximum Collector-Emitter Breakdown Voltage: 65V Typical Gain (hFE) (Min): 10 @ 5A, 5V Maximum Power Dissipation: 880W Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - MS2207 - 1079828-MS2207 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MS2207
1079828-MS2207
TRANSISTORS - RF Transistors (BJT) - MS2207 1079828-MS2207
Manufacturer: Microsemi Corporation Win Source Part Number: 1079828-MS2207 Packaging: Bulk Mounting: Chassis Mount Gain: 8dB Frequency - Transition: 1.09GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 250°C (TJ) Case / Package: M216 Maximum Current Collector: 24A VCEO Maximum Collector-Emitter Breakdown Voltage: 65V Typical Gain (hFE) (Min): 10 @ 5A, 5V Maximum Power Dissipation: 880W Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: Microsemi Corporation
Win Source Part Number: 1079828-MS2207
Packaging: Bulk
Mounting: Chassis Mount
Gain: 8dB
Frequency - Transition: 1.09GHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 250°C (TJ)
Case / Package: M216
Maximum Current Collector: 24A
VCEO Maximum Collector-Emitter Breakdown Voltage: 65V
Typical Gain (hFE) (Min): 10 @ 5A, 5V
Maximum Power Dissipation: 880W
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar RF Transistors - MS2207 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MS2207
Bipolar RF Transistors MS2207
RF TRANS NPN 65V 1.09GHZ M216

RF TRANS NPN 65V 1.09GHZ M216

Supplier's Site Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MS2207
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MS2207
RF TRANS NPN 65V 1.09GHZ M216

RF TRANS NPN 65V 1.09GHZ M216

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1079828-MS2207 MS2207 MS2207
Product Name TRANSISTORS - RF Transistors (BJT) - MS2207 Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN
Package Type SOT3; M216 M216
IC(max) 24000 milliamps
VCEO 65 volts 65 volts
Power Gain 8 dB
Unlock Full Specs
to access all available technical data