Microsemi Corp. TRANSISTORS - RF Transistors (BJT) - MS2201 MS2201

Manufacturer: Microsemi Corporation
Win Source Part Number: 1079827-MS2201
Packaging: Bulk
Mounting: Chassis Mount
Gain: 9dB
Frequency - Transition: 1.025GHz to 1.15GHz
Transistor Polarity: NPN
Family Name: MS2201
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 200°C (TJ)
Case / Package: M220
Maximum Current Collector: 250mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Typical Gain (hFE) (Min): 0.95 @ 10mA, 5V
Maximum Power Dissipation: 10W
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, M220, 2 PIN Product overview: MS2201 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MS2201 can be used for catalog matching and distributor lookup.