Microsemi Corp. TRANSISTORS - RF Transistors (BJT) - MS2201 MS2201

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1079827-MS2201 Packaging: Bulk Mounting: Chassis Mount Gain: 9dB Frequency - Transition: 1.025GHz to 1.15GHz Transistor Polarity: NPN Family Name: MS2201 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 200°C (TJ) Case / Package: M220 Maximum Current Collector: 250mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Typical Gain (hFE) (Min): 0.95 @ 10mA, 5V Maximum Power Dissipation: 10W Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1079827-MS2201 Packaging: Bulk Mounting: Chassis Mount Gain: 9dB Frequency - Transition: 1.025GHz to 1.15GHz Transistor Polarity: NPN Family Name: MS2201 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 200°C (TJ) Case / Package: M220 Maximum Current Collector: 250mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Typical Gain (hFE) (Min): 0.95 @ 10mA, 5V Maximum Power Dissipation: 10W Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - MS2201 - 1079827-MS2201 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MS2201
1079827-MS2201
TRANSISTORS - RF Transistors (BJT) - MS2201 1079827-MS2201
Manufacturer: Microsemi Corporation Win Source Part Number: 1079827-MS2201 Packaging: Bulk Mounting: Chassis Mount Gain: 9dB Frequency - Transition: 1.025GHz to 1.15GHz Transistor Polarity: NPN Family Name: MS2201 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 200°C (TJ) Case / Package: M220 Maximum Current Collector: 250mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Typical Gain (hFE) (Min): 0.95 @ 10mA, 5V Maximum Power Dissipation: 10W Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Microsemi Corporation
Win Source Part Number: 1079827-MS2201
Packaging: Bulk
Mounting: Chassis Mount
Gain: 9dB
Frequency - Transition: 1.025GHz to 1.15GHz
Transistor Polarity: NPN
Family Name: MS2201
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 200°C (TJ)
Case / Package: M220
Maximum Current Collector: 250mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Typical Gain (hFE) (Min): 0.95 @ 10mA, 5V
Maximum Power Dissipation: 10W
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar RF Transistors - MS2201 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MS2201
Bipolar RF Transistors MS2201
RF TRANS NPN 45V 1.15GHZ M220

RF TRANS NPN 45V 1.15GHZ M220

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MS2201
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MS2201
RF TRANS NPN 45V 1.15GHZ M220

RF TRANS NPN 45V 1.15GHZ M220

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1079827-MS2201 MS2201 MS2201
Product Name TRANSISTORS - RF Transistors (BJT) - MS2201 Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN
Package Type SOT3; M220 M220
Packing Method Bulk; Bulk Bulk; Bulk
TJ 200 C (392 F) 200 C (392 F)
Power Gain 0.9500 dB 9 dB
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