Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF MS2200

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1325034-MS2200 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Chassis Mount Power - Max: 1167W Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 43.2A Gain: 9.7dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Frequency - Transition: 400MHz ~ 500MHz Supplier Device Package: M102 Temperature Range - Operating: 200°C (TJ) Case / Package: M102 ECCN: EAR99 Fake Threat In the Open Market: 71 REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: MS2200-ND,150-MS2200 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1325034-MS2200 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Chassis Mount Power - Max: 1167W Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 43.2A Gain: 9.7dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Frequency - Transition: 400MHz ~ 500MHz Supplier Device Package: M102 Temperature Range - Operating: 200°C (TJ) Case / Package: M102 ECCN: EAR99 Fake Threat In the Open Market: 71 REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: MS2200-ND,150-MS2200 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1325034-MS2200 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1325034-MS2200
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1325034-MS2200
Manufacturer: Microsemi Corporation Win Source Part Number: 1325034-MS2200 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Chassis Mount Power - Max: 1167W Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 43.2A Gain: 9.7dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Frequency - Transition: 400MHz ~ 500MHz Supplier Device Package: M102 Temperature Range - Operating: 200°C (TJ) Case / Package: M102 ECCN: EAR99 Fake Threat In the Open Market: 71 REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: MS2200-ND,150-MS2200 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: Microsemi Corporation
Win Source Part Number: 1325034-MS2200
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Bulk
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 1167W
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 43.2A
Gain: 9.7dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Frequency - Transition: 400MHz ~ 500MHz
Supplier Device Package: M102
Temperature Range - Operating: 200°C (TJ)
Case / Package: M102
ECCN: EAR99
Fake Threat In the Open Market: 71
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Other Part Number: MS2200-ND,150-MS2200
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MS2200
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MS2200
RF TRANS NPN 65V 500MHZ M102

RF TRANS NPN 65V 500MHZ M102

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors
Product Number 1325034-MS2200 MS2200
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3; M102
Packing Method Bulk; Bulk Bulk; Bulk
TJ 200 C (392 F)
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