Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF MS1227

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1325617-MS1227 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Chassis Mount Power - Max: 80W Voltage - Collector Emitter Breakdown (Max): 18V Current - Collector (Ic) (Max): 4.5A Gain: 15dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: M113 Temperature Range - Operating: 200°C (TJ) Case / Package: M113 ECCN: EAR99 Fake Threat In the Open Market: 70 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: MS1227-ND,150-MS1227 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1325617-MS1227 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Chassis Mount Power - Max: 80W Voltage - Collector Emitter Breakdown (Max): 18V Current - Collector (Ic) (Max): 4.5A Gain: 15dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: M113 Temperature Range - Operating: 200°C (TJ) Case / Package: M113 ECCN: EAR99 Fake Threat In the Open Market: 70 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: MS1227-ND,150-MS1227 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1325617-MS1227 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1325617-MS1227
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1325617-MS1227
Manufacturer: Microsemi Corporation Win Source Part Number: 1325617-MS1227 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Chassis Mount Power - Max: 80W Voltage - Collector Emitter Breakdown (Max): 18V Current - Collector (Ic) (Max): 4.5A Gain: 15dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: M113 Temperature Range - Operating: 200°C (TJ) Case / Package: M113 ECCN: EAR99 Fake Threat In the Open Market: 70 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: MS1227-ND,150-MS1227 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: Microsemi Corporation
Win Source Part Number: 1325617-MS1227
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Bulk
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 80W
Voltage - Collector Emitter Breakdown (Max): 18V
Current - Collector (Ic) (Max): 4.5A
Gain: 15dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: M113
Temperature Range - Operating: 200°C (TJ)
Case / Package: M113
ECCN: EAR99
Fake Threat In the Open Market: 70
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: MS1227-ND,150-MS1227
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MS1227
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MS1227
RF TRANS NPN 18V 30MHZ M113

RF TRANS NPN 18V 30MHZ M113

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors
Product Number 1325617-MS1227 MS1227
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3; M113
Packing Method Bulk; Bulk Bulk; Bulk
TJ 200 C (392 F)
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