Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF MS1226

Description
Win Source Part Number: 1012521-MS1226 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Bulk Standard Package: 1 Power - Max: 80W Voltage - Collector Emitter Breakdown (Max): 36V Current - Collector (Ic) (Max): 4.5A Gain: 18dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Frequency - Transition: 30MHz Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113 Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microsemi Corporation Other Names: 150-MS1226,MS1226-ND Product Status: Obsolete
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Description
Win Source Part Number: 1012521-MS1226 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Bulk Standard Package: 1 Power - Max: 80W Voltage - Collector Emitter Breakdown (Max): 36V Current - Collector (Ic) (Max): 4.5A Gain: 18dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Frequency - Transition: 30MHz Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113 Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microsemi Corporation Other Names: 150-MS1226,MS1226-ND Product Status: Obsolete
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1012521-MS1226 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1012521-MS1226
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1012521-MS1226
Win Source Part Number: 1012521-MS1226 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Bulk Standard Package: 1 Power - Max: 80W Voltage - Collector Emitter Breakdown (Max): 36V Current - Collector (Ic) (Max): 4.5A Gain: 18dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Frequency - Transition: 30MHz Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113 Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microsemi Corporation Other Names: 150-MS1226,MS1226-ND Product Status: Obsolete

Win Source Part Number: 1012521-MS1226
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Bulk
Standard Package: 1
Power - Max: 80W
Voltage - Collector Emitter Breakdown (Max): 36V
Current - Collector (Ic) (Max): 4.5A
Gain: 18dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Frequency - Transition: 30MHz
Mounting Type: Chassis Mount
Package / Case: M113
Supplier Device Package: M113
Temperature Range - Operating: 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microsemi Corporation
Other Names: 150-MS1226,MS1226-ND
Product Status: Obsolete

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MS1226
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MS1226
RF TRANS NPN 36V 30MHZ M113

RF TRANS NPN 36V 30MHZ M113

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors
Product Number 1012521-MS1226 MS1226
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3
TJ 200 C (392 F)
Power Gain 18 dB
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