Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF MS1003

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1325035-MS1003 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Surface Mount Power - Max: 270W Voltage - Collector Emitter Breakdown (Max): 18V Current - Collector (Ic) (Max): 20A Gain: 6dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Frequency - Transition: 136MHz ~ 175MHz Supplier Device Package: M111 Temperature Range - Operating: 200°C (TJ) Case / Package: M111 ECCN: EAR99 Fake Threat In the Open Market: 82 REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: 150-MS1003,MS1003-ND Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1325035-MS1003 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Surface Mount Power - Max: 270W Voltage - Collector Emitter Breakdown (Max): 18V Current - Collector (Ic) (Max): 20A Gain: 6dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Frequency - Transition: 136MHz ~ 175MHz Supplier Device Package: M111 Temperature Range - Operating: 200°C (TJ) Case / Package: M111 ECCN: EAR99 Fake Threat In the Open Market: 82 REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: 150-MS1003,MS1003-ND Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Suppliers

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Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1325035-MS1003 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1325035-MS1003
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1325035-MS1003
Manufacturer: Microsemi Corporation Win Source Part Number: 1325035-MS1003 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Surface Mount Power - Max: 270W Voltage - Collector Emitter Breakdown (Max): 18V Current - Collector (Ic) (Max): 20A Gain: 6dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Frequency - Transition: 136MHz ~ 175MHz Supplier Device Package: M111 Temperature Range - Operating: 200°C (TJ) Case / Package: M111 ECCN: EAR99 Fake Threat In the Open Market: 82 REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: 150-MS1003,MS1003-ND Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: Microsemi Corporation
Win Source Part Number: 1325035-MS1003
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Bulk
Standard Package: 1
Mounting: Surface Mount
Power - Max: 270W
Voltage - Collector Emitter Breakdown (Max): 18V
Current - Collector (Ic) (Max): 20A
Gain: 6dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Frequency - Transition: 136MHz ~ 175MHz
Supplier Device Package: M111
Temperature Range - Operating: 200°C (TJ)
Case / Package: M111
ECCN: EAR99
Fake Threat In the Open Market: 82
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Other Part Number: 150-MS1003,MS1003-ND
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Bipolar RF Transistors - MS1003 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MS1003
Bipolar RF Transistors MS1003
RF TRANS NPN 18V 175MHZ M111

RF TRANS NPN 18V 175MHZ M111

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category RF Transistors Bipolar RF Transistors
Product Number 1325035-MS1003 MS1003
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Bipolar RF Transistors
Polarity NPN NPN; NPN
Package Type SOT3; M111 M111
Packing Method Bulk; Bulk
TJ 200 C (392 F) 200 C (392 F)
Power Gain 6 dB 6 dB
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