Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF MS1001

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1325616-MS1001 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Chassis Mount Power - Max: 270W Voltage - Collector Emitter Breakdown (Max): 18V Current - Collector (Ic) (Max): 20A Gain: 13dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Frequency - Transition: 30MHz Supplier Device Package: M174 Temperature Range - Operating: 200°C (TJ) Case / Package: M174 ECCN: EAR99 Fake Threat In the Open Market: 74 REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: MS1001-ND,150-MS1001 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1325616-MS1001 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Chassis Mount Power - Max: 270W Voltage - Collector Emitter Breakdown (Max): 18V Current - Collector (Ic) (Max): 20A Gain: 13dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Frequency - Transition: 30MHz Supplier Device Package: M174 Temperature Range - Operating: 200°C (TJ) Case / Package: M174 ECCN: EAR99 Fake Threat In the Open Market: 74 REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: MS1001-ND,150-MS1001 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Suppliers

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Product
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1325616-MS1001 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1325616-MS1001
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1325616-MS1001
Manufacturer: Microsemi Corporation Win Source Part Number: 1325616-MS1001 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Chassis Mount Power - Max: 270W Voltage - Collector Emitter Breakdown (Max): 18V Current - Collector (Ic) (Max): 20A Gain: 13dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Frequency - Transition: 30MHz Supplier Device Package: M174 Temperature Range - Operating: 200°C (TJ) Case / Package: M174 ECCN: EAR99 Fake Threat In the Open Market: 74 REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: MS1001-ND,150-MS1001 Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: Microsemi Corporation
Win Source Part Number: 1325616-MS1001
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Bulk
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 270W
Voltage - Collector Emitter Breakdown (Max): 18V
Current - Collector (Ic) (Max): 20A
Gain: 13dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: M174
Temperature Range - Operating: 200°C (TJ)
Case / Package: M174
ECCN: EAR99
Fake Threat In the Open Market: 74
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Other Part Number: MS1001-ND,150-MS1001
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 1325616-MS1001
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
Polarity NPN
Package Type SOT3; M174
Packing Method Bulk; Bulk
TJ 200 C (392 F)
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