Microsemi Corp. TRANSISTORS - RF Transistors (BJT) - MRF904 MRF904

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 045012-MRF904 Packaging: Bulk Mounting: Through Hole Gain: 6.5dB to 10.5dB Frequency - Transition: 4GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB @ 450MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 045012-MRF904 Packaging: Bulk Mounting: Through Hole Gain: 6.5dB to 10.5dB Frequency - Transition: 4GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB @ 450MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 1
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Suppliers

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Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - MRF904 - 045012-MRF904 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MRF904
045012-MRF904
TRANSISTORS - RF Transistors (BJT) - MRF904 045012-MRF904
Manufacturer: Microsemi Corporation Win Source Part Number: 045012-MRF904 Packaging: Bulk Mounting: Through Hole Gain: 6.5dB to 10.5dB Frequency - Transition: 4GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB @ 450MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 045012-MRF904
Packaging: Bulk
Mounting: Through Hole
Gain: 6.5dB to 10.5dB
Frequency - Transition: 4GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB @ 450MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 200°C (TJ)
Case / Package: TO-72
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MRF904 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MRF904
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MRF904
RF TRANS NPN 15V 4GHZ TO72

RF TRANS NPN 15V 4GHZ TO72

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 045012-MRF904 MRF904
Product Name TRANSISTORS - RF Transistors (BJT) - MRF904 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
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