Microsemi Corp. TRANSISTORS - RF Transistors (BJT) - MRF8372R2 MRF8372R2

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1079757-MRF8372R2 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 8dB to 9.5dB Frequency - Transition: 870MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SO Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 16V Typical Gain (hFE) (Min): 30 @ 50mA, 5V Maximum Power Dissipation: 2.2W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Quantity per package: 2,500
  • TRANSISTORS - RF Transistors (BJT) - MRF8372R2 - 1079757-MRF8372R2 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MRF8372R2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1079757-MRF8372R2 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 8dB to 9.5dB Frequency - Transition: 870MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SO Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 16V Typical Gain (hFE) (Min): 30 @ 50mA, 5V Maximum Power Dissipation: 2.2W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

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TRANSISTORS - RF Transistors (BJT) - MRF8372R2 - 1079757-MRF8372R2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MRF8372R2
1079757-MRF8372R2
TRANSISTORS - RF Transistors (BJT) - MRF8372R2 1079757-MRF8372R2
Manufacturer: Microsemi Corporation Win Source Part Number: 1079757-MRF8372R2 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 8dB to 9.5dB Frequency - Transition: 870MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SO Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 16V Typical Gain (hFE) (Min): 30 @ 50mA, 5V Maximum Power Dissipation: 2.2W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Microsemi Corporation
Win Source Part Number: 1079757-MRF8372R2
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 8dB to 9.5dB
Frequency - Transition: 870MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 8-SO
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 16V
Typical Gain (hFE) (Min): 30 @ 50mA, 5V
Maximum Power Dissipation: 2.2W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MRF8372R2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MRF8372R2
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MRF8372R2
RF TRANS NPN 16V 870MHZ 8SO

RF TRANS NPN 16V 870MHZ 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 1079757-MRF8372R2 MRF8372R2
Product Name TRANSISTORS - RF Transistors (BJT) - MRF8372R2 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
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