Manufacturer: Microsemi Corporation
Win Source Part Number: 208798-MRF5812R1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 13dB to 15.5dB
Frequency - Transition: 5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 2dB to 3dB @ 500MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 8-SO
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 50 @ 50mA, 5V
Maximum Power Dissipation: 1.25W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
RF TRANS NPN 15V 5GHZ 8SO
RF TRANS NPN 15V 5GHZ 8SO
| Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 208798-MRF5812R1 | MRF5812R1 | MRF5812R1 |
| Product Name | TRANSISTORS - RF Transistors (BJT) - MRF5812R1 | Bipolar RF Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN; NPN | NPN; NPN | |
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | |
| IC(max) | 200 milliamps | ||
| VCEO | 15 volts | 15 volts | |
| Power Gain | 13 dB |
