Microsemi Corp. Bipolar RF Transistors MRF5812R1

Description
RF TRANS NPN 15V 5GHZ 8SO
Request a Quote Datasheet
Description
RF TRANS NPN 15V 5GHZ 8SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - MRF5812R1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MRF5812R1
Bipolar RF Transistors MRF5812R1
RF TRANS NPN 15V 5GHZ 8SO

RF TRANS NPN 15V 5GHZ 8SO

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - MRF5812R1 - 208798-MRF5812R1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MRF5812R1
208798-MRF5812R1
TRANSISTORS - RF Transistors (BJT) - MRF5812R1 208798-MRF5812R1
Manufacturer: Microsemi Corporation Win Source Part Number: 208798-MRF5812R1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 13dB to 15.5dB Frequency - Transition: 5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 2dB to 3dB @ 500MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SO Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 50 @ 50mA, 5V Maximum Power Dissipation: 1.25W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Microsemi Corporation
Win Source Part Number: 208798-MRF5812R1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 13dB to 15.5dB
Frequency - Transition: 5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 2dB to 3dB @ 500MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 8-SO
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 50 @ 50mA, 5V
Maximum Power Dissipation: 1.25W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MRF5812R1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MRF5812R1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MRF5812R1
RF TRANS NPN 15V 5GHZ 8SO

RF TRANS NPN 15V 5GHZ 8SO

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number MRF5812R1 208798-MRF5812R1 MRF5812R1
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - MRF5812R1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN
Package Type 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO
IC(max) 200 milliamps
VCEO 15 volts 15 volts
Power Gain 13 dB
Unlock Full Specs
to access all available technical data