Microsemi Corp. Bipolar RF Transistors MRF553GT

Description
RF TRNS NPN 16V 175MHZ PWR MACRO
Description
RF TRNS NPN 16V 175MHZ PWR MACRO
Datasheet
Datasheet Summary
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The MRF553 and MRF553G are NPN RF transistors designed for wideband large-signal stages in the VHF frequency range, housed in a Power Macro package. They are rated for a maximum collector-emitter voltage of 16 Vdc, collector current of 500 mA, and total device dissipation of 3.0 W at 75°C. At 175 MHz and 12.5 V, they deliver 1.5 W output power with a minimum gain of 11.5 dB and typical efficiency of 60%. The MRF553G variant features an electroless tin-plated, RoHS-compliant terminal finish. Output capacitance is 12 to 20 pF at 1 MHz. The device sustains load mismatch conditions up to VSWR of 10:1 without output power degradation.

Datasheet Summary
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The MRF553 and MRF553G are NPN RF transistors designed for wideband large-signal stages in the VHF frequency range, housed in a Power Macro package. They are rated for a maximum collector-emitter voltage of 16 Vdc, collector current of 500 mA, and total device dissipation of 3.0 W at 75°C. At 175 MHz and 12.5 V, they deliver 1.5 W output power with a minimum gain of 11.5 dB and typical efficiency of 60%. The MRF553G variant features an electroless tin-plated, RoHS-compliant terminal finish. Output capacitance is 12 to 20 pF at 1 MHz. The device sustains load mismatch conditions up to VSWR of 10:1 without output power degradation.

Suppliers

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Supplier Links
Bipolar RF Transistors - MRF553GT - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MRF553GT
Bipolar RF Transistors MRF553GT
RF TRNS NPN 16V 175MHZ PWR MACRO

RF TRNS NPN 16V 175MHZ PWR MACRO

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number MRF553GT
Product Name Bipolar RF Transistors
Polarity NPN; NPN
Package Type Power Macro
IC(max) 500 milliamps
VCEO 16 volts
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