Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) MDS1100

Description
RF TRANS NPN 65V 1.03GHZ 55TU-1
  • Bipolar RF Transistors - MDS1100 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Datasheet
Description
RF TRANS NPN 65V 1.03GHZ 55TU-1
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MDS1100
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MDS1100
RF TRANS NPN 65V 1.03GHZ 55TU-1

RF TRANS NPN 65V 1.03GHZ 55TU-1

Supplier's Site
Bipolar RF Transistors - MDS1100 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MDS1100
Bipolar RF Transistors MDS1100
RF TRANS NPN 65V 1.03GHZ 55TU-1

RF TRANS NPN 65V 1.03GHZ 55TU-1

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number MDS1100 MDS1100
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar RF Transistors
Packing Method Bulk; Bulk
VCEO 65 volts 65 volts
Output Power 8750 watts 8750 watts
Polarity NPN; NPN
Package Type 55TU-1
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