Microsemi Corp. Bipolar RF Transistors JTDB75

Description
RF TRANS NPN 55V 1.215GHZ 55AW
  • Bipolar RF Transistors - JTDB75 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1325038-JTDB75 - Win Source Electronics
    Win Source Electronics
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Description
RF TRANS NPN 55V 1.215GHZ 55AW
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Suppliers

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Product
Description
Supplier Links
Bipolar RF Transistors - JTDB75 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
JTDB75
Bipolar RF Transistors JTDB75
RF TRANS NPN 55V 1.215GHZ 55AW

RF TRANS NPN 55V 1.215GHZ 55AW

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1325038-JTDB75 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1325038-JTDB75
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1325038-JTDB75
Manufacturer: Microsemi Corporation Win Source Part Number: 1325038-JTDB75 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Bulk Standard Package: 1 Mounting: Chassis Mount Power - Max: 220W Voltage - Collector Emitter Breakdown (Max): 55V Current - Collector (Ic) (Max): 8A Gain: 7dB ~ 8.2dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Frequency - Transition: 960MHz ~ 1.215GHz Supplier Device Package: 55AW Temperature Range - Operating: 200°C (TJ) Case / Package: 55AW ECCN: EAR99 Fake Threat In the Open Market: 67 REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: 150-JTDB75,JTDB75-ND Product Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: Microsemi Corporation
Win Source Part Number: 1325038-JTDB75
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Bulk
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 220W
Voltage - Collector Emitter Breakdown (Max): 55V
Current - Collector (Ic) (Max): 8A
Gain: 7dB ~ 8.2dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: 55AW
Temperature Range - Operating: 200°C (TJ)
Case / Package: 55AW
ECCN: EAR99
Fake Threat In the Open Market: 67
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Other Part Number: 150-JTDB75,JTDB75-ND
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JTDB75
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JTDB75
RF TRANS NPN 55V 1.215GHZ 55AW

RF TRANS NPN 55V 1.215GHZ 55AW

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number JTDB75 1325038-JTDB75 JTDB75
Product Name Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN
Package Type 55AW SOT3; 55AW
IC(max) 8000 milliamps
VCEO 55 volts 55 volts
Power Gain 7 dB 7 to 8.2 dB
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