Manufacturer: Microsemi Corporation
Win Source Part Number: 1325038-JTDB75
Category: Discrete Semiconductor Products>Transistors
Packaging: Bulk
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 220W
Voltage - Collector Emitter Breakdown (Max): 55V
Current - Collector (Ic) (Max): 8A
Gain: 7dB ~ 8.2dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: 55AW
Temperature Range - Operating: 200°C (TJ)
Case / Package: 55AW
ECCN: EAR99
Fake Threat In the Open Market: 67
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Other Part Number: 150-JTDB75,JTDB75-ND
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)
RF TRANS NPN 55V 1.215GHZ 55AW
RF TRANS NPN 55V 1.215GHZ 55AW
| Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1325038-JTDB75 | JTDB75 | JTDB75 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF | Bipolar RF Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN | |
| Package Type | SOT3; 55AW | 55AW | |
| Packing Method | Bulk; Bulk | Bulk; Bulk | |
| TJ | 200 C (392 F) | 200 C (392 F) | |
| Power Gain | 7 to 8.2 dB | 7 dB |