Microsemi Corp. MOSFET Jantxv2N6989

The Jantxv2N6989 is a quad NPN silicon switching transistor in a 20-pin leadless package, designed for high-reliability switching applications. It shares the maximum collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 1.5 W at +25°C with the 2N6989 series. The device is qualified per MIL-PRF-19500/559 and operates over a junction temperature range of -65°C to +200°C. Forward current transfer ratio (hFE) ranges from 30 to 300 depending on collector current, with collector-emitter saturation voltage up to 1.0 V at 500 mA collector and 50 mA base current. Input and output capacitances are 25 pF and 8.0 pF respectively at specified conditions.