Microsemi Corp. Bipolar Transistors - BJT Jantxv2N6988/TR

Quad PNP silicon switching transistor array qualified to MIL-PRF-19500/558, rated for 60 Vdc collector-emitter and collector-base voltage, 600 mAdc collector current, and -65°C to +200°C operating temperature. The device is available in a 20-pin leadless package and dissipation is limited to 0.4 W at +25°C, derating linearly at 2.286 mW/°C above that point. Electrical characteristics include forward-current transfer ratio (hFE) of 50 to 300 at 150 mA collector current and collector-emitter saturation voltage up to 1.6 Vdc at 500 mA collector current.