Microsemi Corp. Bipolar Transistors - BJT Jantxv2N6987/TR

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Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
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Quad PNP silicon switching transistor array in a 20-pin leadless package, rated for a collector-emitter voltage of 60 Vdc and a collector current of 600 mAdc, with a total power dissipation of 1.0 W at +25°C, derating linearly at 8.57 mW/°C above that temperature. Operating and storage junction temperature ranges from -65°C to +200°C. Complies with MIL-PRF-19500/558 qualification for JANTXV level devices.

Datasheet Summary
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Quad PNP silicon switching transistor array in a 20-pin leadless package, rated for a collector-emitter voltage of 60 Vdc and a collector current of 600 mAdc, with a total power dissipation of 1.0 W at +25°C, derating linearly at 8.57 mW/°C above that temperature. Operating and storage junction temperature ranges from -65°C to +200°C. Complies with MIL-PRF-19500/558 qualification for JANTXV level devices.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantxv2N6987/TR
Bipolar Transistors - BJT Jantxv2N6987/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantxv2N6987/TR
Product Name Bipolar Transistors - BJT
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