Microsemi Corp. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single JANTXV2N6849

Win Source Part Number: 1209700-JANTXV2N6849 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Military, MIL-PRF-19500/564 Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 800mW (Ta), 25W (Tc) Mounting Type: Through Hole Package / Case: TO-205AF Metal Can Supplier Device Package: TO-205AF (TO-39) Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microsemi Corporation Other Names: 150-JANTXV2N6849,JAN TXV2N6849-MIL,JANTXV 2N6849-ND Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: RoHS non-compliant