Microsemi Corp. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single JANTXV2N6796

Manufacturer: Microsemi Corporation Win Source Part Number: 1325279-JANTXV2N6796 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bulk Standard Package: 1 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 800mW, 25W (Tc) Supplier Device Package: TO-205AF (TO-39) Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-205AF Metal Can ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: JANTXV2N6796-ND,JANT XV2N6796-MIL,150-JAN TXV2N6796 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: RoHS non-compliant