Microsemi Corp. Bipolar Transistors - BJT JANTXV2N5679

The JANTXV2N5679 is a PNP silicon power transistor for amplifier applications, housed in a TO-39 package. It has a collector-emitter voltage rating of 100 Vdc, a collector current rating of 1.0 Adc, and a total power dissipation of 1.0 W at 25°C, derating at 5.7 mW/°C above that temperature. Thermal resistance from junction to case is 17.5°C/W. The device meets MIL-PRF-19500/582 qualification standards. Operating and storage temperature range is from -65°C to +200°C. Forward current transfer ratio (hFE) ranges from 5 to 150 depending on conditions, with collector-emitter saturation voltage up to 1.0 Vdc at 500 mA collector current. Output capacitance is 50 pF at 20 Vdc and 1 MHz.