NPN silicon power transistor for high-current switching and amplification, qualified to MIL-PRF-19500/488 at JANTXV level. Packaged in TO-3 (TO-204AA) with a maximum collector current of 30 A and collector-emitter breakdown voltage of 120 V. Maximum power dissipation is 140 W at 25°C case temperature. Thermal resistance junction-to-case is 1.25 °C/W. Operating and storage temperature range is -65°C to +200°C. Collector-emitter saturation voltage is 5.0 V at 30 A collector current and 6.0 A base current. Base-emitter saturation voltage is 1.5 V at 15 A collector current and 1.2 A base current. Output capacitance is 900 pF at 10 V collector-base voltage and 100 kHz to 1.0 MHz frequency. Turn-on time is 0.5 µs and turn-off time is 1.5 µs under specified switching conditions.
Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN Product overview: JANTXV2N5672 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30A, 120V. Search-friendly keywords include transistor, BJT, switching, amplification, 30A, 120V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTXV2N5672 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTXV2N5672 |
| Product Name | 30A 120V Bipolar Transistor |
| Polarity | NPN |
