Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JANTXV2N5667S JANTXV2N5667S

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191560-JANTXV2N5667 S Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 (TO-205AD) Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 5A Voltage - Collector Emitter Breakdown (Maximum): 300V Current - Collector Cutoff (Maximum): 200nA Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 1A, 5A DC Current Gain (hFE) (Minimum) at Ic, Vce: 25 at 1A, 5V Maximum Power: 1.2W
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191560-JANTXV2N5667 S Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 (TO-205AD) Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 5A Voltage - Collector Emitter Breakdown (Maximum): 300V Current - Collector Cutoff (Maximum): 200nA Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 1A, 5A DC Current Gain (hFE) (Minimum) at Ic, Vce: 25 at 1A, 5V Maximum Power: 1.2W
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Suppliers

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TRANSISTORS - Transistors (BJT) - Single - JANTXV2N5667S - 1191560-JANTXV2N5667S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - JANTXV2N5667S
1191560-JANTXV2N5667S
TRANSISTORS - Transistors (BJT) - Single - JANTXV2N5667S 1191560-JANTXV2N5667S
Manufacturer: Microsemi Corporation Win Source Part Number: 1191560-JANTXV2N5667 S Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 (TO-205AD) Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 5A Voltage - Collector Emitter Breakdown (Maximum): 300V Current - Collector Cutoff (Maximum): 200nA Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 1A, 5A DC Current Gain (hFE) (Minimum) at Ic, Vce: 25 at 1A, 5V Maximum Power: 1.2W

Manufacturer: Microsemi Corporation
Win Source Part Number: 1191560-JANTXV2N5667S
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-39 (TO-205AD)
Temperature Range - Operating: -65°C ~ 200°C
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-205AD, TO-39-3 Metal Can
Current - Collector (Ic) (Maximum): 5A
Voltage - Collector Emitter Breakdown (Maximum): 300V
Current - Collector Cutoff (Maximum): 200nA
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1V at 1A, 5A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 25 at 1A, 5V
Maximum Power: 1.2W

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 1191560-JANTXV2N5667S
Product Name TRANSISTORS - Transistors (BJT) - Single - JANTXV2N5667S
Polarity NPN
Package Type TO-3; TO-39; SOT3
Packing Method Bulk; Bulk
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