NPN silicon power switching transistor designed for signal amplification and switching applications, qualified per MIL-PRF-19500/455, available in a TO-5 package. It has a collector-emitter voltage rating of 300 Vdc, collector current capability of 5.0 Adc, and total power dissipation of 1.5 W at +100°C. The device exhibits a forward-current transfer ratio of 25 to 75 at 1.0 Adc collector current and 5.0 Vdc collector-emitter voltage, with a collector-emitter saturation voltage of 0.4 Vdc at 3.0 Adc collector current and 0.6 Adc base current. It features a turn-off time of 2.0 μs under specified switching conditions, an input capacitance of 120 pF at 10 V reverse bias, and operates within a junction temperature range of -65°C to +200°C.
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin, TO-5, 2 PIN Product overview: JANTXV2N5667 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5A, 300V. Search-friendly keywords include transistor, BJT, switching, amplification, 5A, 300V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTXV2N5667 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTXV2N5667 |
| Product Name | 5A 300V Bipolar Transistor |
| Polarity | NPN |
| IC(max) | 5000 milliamps |
| VCEO | 300 volts |
