Microsemi Corp. Bipolar Transistors - BJT Jantxv2N5667

The Jantxv2N5667 is an NPN power silicon switching transistor in a TO-66 package, qualified per MIL-PRF-19500/455. It has a collector-emitter voltage rating of 300 Vdc and a collector-base voltage rating of 400 Vdc, with a maximum collector current of 5.0 Adc and a power dissipation of 1.5 W at +25°C. The transistor exhibits a forward-current transfer ratio (hFE) of 25 to 75 at 1.0 Adc collector current and 5.0 Vdc collector-emitter voltage, with a collector-emitter saturation voltage of 0.4 Vdc at 3.0 Adc collector current and 0.6 Adc base current. The switching turn-off time is 2.0 µs under specified conditions. Operating and storage junction temperatures range from -65°C to +200°C.