Microsemi Corp. Bipolar Transistors - BJT Jantxv2N5666S

NPN power silicon switching transistor qualified per MIL-PRF-19500/455, available in TO-66 package, with a collector-emitter voltage rating of 300 Vdc, collector-base voltage of 400 Vdc, and continuous collector current of 5.0 Adc. Maximum power dissipation is 1.5 W at +25°C and 35 W at +100°C. Forward current transfer ratio ranges from 25 to 75 at Iₓ=1.0 A and Vₓₓ=5.0 V. Collector-emitter saturation voltage is 0.4 V at Iₓ=3.0 A and Iₐ=0.6 A. Turn-off time is 2.0 μs under specified switching conditions.