Microsemi Corp. Bipolar Transistors - BJT Jantxv2N5665

NPN silicon power switching transistor designed for high-current switching applications, available in a TO-39 (TO-205AD) package. It has a collector-emitter voltage rating of 300 Vdc, collector-base voltage of 400 Vdc, and maximum collector current of 5.0 Adc. Power dissipation is 1.5 W at +25°C and 35 W at +100°C. The device meets MIL-PRF-19500/455 qualification standards. Forward current transfer ratio ranges from 25 to 75 at 1.0 Adc collector current, with collector-emitter saturation voltage of 0.4 Vdc at 3.0 Adc collector and 0.6 Adc base current. Turn-off time is 2.0 μs under specified test conditions.