The JANTXV2N5665 is an NPN silicon power switching transistor in a TO-66 package, rated for a collector-emitter voltage of 300 Vdc and a continuous collector current of 5.0 Adc. It has a collector-base voltage rating of 400 Vdc and an emitter-base voltage of 6.0 Vdc. The device operates within a junction temperature range of -65 to +200 °C and dissipates up to 1.5 W at 25 °C, de-rating to 30 W at 100 °C. Electrical characteristics include a forward current transfer ratio of 25 to 75 at 1.0 A collector current, with collector-emitter saturation voltage of 0.4 V at 3.0 A collector and 0.6 A base current. The transistor meets MIL-PRF-19500/455 qualification standards.
TRANS NPN 300V 5A TO66 Product overview: JANTXV2N5665 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 300V, 5A, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTXV2N5665 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTXV2N5665 |
| Product Name | 300V 5A Bipolar Transistor |
| IC(max) | 5000 milliamps |
