Microsemi Corp. Bipolar Transistors - BJT Jantxv2N5581/TR

NPN silicon switching transistor qualified per MIL-PRF-19500/423 at JANTXV level, housed in a TO-206AB (TO-46) package, with a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and continuous collector current of 800 mAdc. Power dissipation is 0.5 W at 25°C with derating above that temperature. Forward current transfer ratio ranges from 30 to 120 at collector currents up to 150 mA, and 0.6 to 1.2 V for base-emitter saturation voltage at 150 mA collector and 15 mA base current. Switching times are 35 μs turn-on and 300 μs turn-off under specified conditions. Operating and storage junction temperature range is -55°C to +200°C.