Microsemi Corp. Bipolar Transistors - BJT Jantxv2N5153/TR

The JANTXV2N5153/TR is a PNP power silicon transistor in a TO-5 package, rated for a collector-emitter voltage of 80 Vdc and a continuous collector current of 2.0 Adc, with a maximum power dissipation of 10 W at 25°C. The junction-to-case thermal resistance is 1.75°C/W, and the operating junction temperature ranges from -65°C to +200°C. The forward current transfer ratio (hFE) ranges from 70 to 200 at a collector current of 2.5 Adc and a collector-emitter voltage of 5 V. The collector-emitter saturation voltage is 0.75 V at 2.5 Adc collector current and 250 mA base current. Turn-off time is 1.5 μs under specified switching conditions. The device is qualified per MIL-PRF-19500/545 and features a collector electrically and mechanically connected to the case. The TO-5 package has a case diameter of 0.305 to 0.335 inches and lead dimensions consistent with standard TO-5 mounting.