Microsemi Corp. Bipolar Transistors - BJT Jantxv2N4449/TR

NPN silicon transistor for high-speed switching applications, available in TO-46 (TO-206AB) package. The JANTXV2N4449 variant has a collector-emitter voltage rating of 20 Vdc, collector-base voltage of 40 Vdc, and emitter-base voltage of 6.0 Vdc. Total power dissipation is 0.36 W at +25°C, derating linearly at 3.08 mW/°C above +70°C. Thermal resistance from ambient to case is 400 °C/W. Current gain (hFE) ranges from 30 to 120 at collector currents of 10 to 100 mA. Collector-emitter saturation voltage is 0.25 V at 30 mA collector current and 3 mA base current. Switching times are 12 µs turn-on and 18 µs turn-off. Device qualified per MIL-PRF-19500/317.