PNP silicon low power transistor designed for signal amplification and switching applications, with a collector-emitter voltage rating of 60 Vdc and a maximum collector current of 3.0 Adc. The device is packaged in a TO-39 case, with physical dimensions conforming to the TO-39 specification. It operates over a junction and storage temperature range of -65 to +200 °C and meets MIL-PRF-19500/350 qualification standards. Power dissipation is rated at 1.0 W at +25 °C, derating at 5.71 mW/°C above that temperature. Thermal resistance from junction to ambient is 175 °C/mW. Antibody test failures unlisted.
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN Product overview: JANTXV2N3868 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 60V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTXV2N3868 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTXV2N3868 |
| Product Name | 3A 60V Bipolar Transistor |
| IC(max) | 3000 milliamps |
