Microsemi Corp. Bipolar Transistors - BJT Jantxv2N3810U/TR

The Jantxv2N3810U/TR is a PNP silicon dual transistor in a TO-78 package, designed for general-purpose amplification and switching applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 50 mAdc, and a total power dissipation of 350 mW when both sections are active at +25°C. The device meets MIL-PRF-19500/336 qualification standards. Its forward current transfer ratio (hFE) ranges from 150 to 450 at 1.0 mA collector current and 5.0 V collector-emitter voltage. The collector-emitter saturation voltage is 0.25 V at 1.0 mA collector current and 100 μA base current. The operating and storage junction temperature range is -65°C to +200°C.