Microsemi Corp. Bipolar Transistors - BJT Jantxv2N3810L/TR

PNP silicon dual transistor in a TO-78 package, designed for general-purpose amplification and switching applications. It has a collector-emitter voltage rating of 60 Vdc, collector current of 50 mAdc, and total power dissipation of 200 mW for one section or 350 mW for both sections at +25°C. The forward current transfer ratio (hFE) ranges from 150 to 450 at collector currents of 100 µA to 1.0 mA and VCE = 5.0 Vdc. Collector-emitter saturation voltage is 0.2 Vdc at IC = 100 µA and IB = 10 µA. The device meets MIL-PRF-19500/336 qualification standards and operates from -65 to +200 °C.