PNP silicon dual transistor for signal amplification and switching, qualified per MIL-PRF-19500/336 as JANTXV2N3810, housed in a TO-78 package. It has a collector-emitter voltage rating of 60 Vdc, collector current of 50 mAdc, and total power dissipation of 0.6 W at +25°C. Operating and storage junction temperature range is -65°C to +200°C. Forward current transfer ratio ranges from 250 to 450 at 10 mA collector current and 5 V collector-emitter voltage. Collector-emitter saturation voltage is 0.2 V at 100 mA collector current and 10 mA base current. Input capacitance is 8.0 pF, output capacitance is 5.0 pF. Noise figure is 3.5 dB at 100 mA collector current and 10 V collector-emitter voltage over 10 Hz to 15.7 kHz. Grounded base configuration Small-signal current gain is 150 to 600 at 1.0 mA collector current and 10 V collector-emitter voltage.
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, SIMILAR TO TO-78, 6 PIN Product overview: JANTXV2N3810 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.05A, 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.05A, 60V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTXV2N3810 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTXV2N3810 |
| Product Name | 0.05A 60V Bipolar Transistor |
| Polarity | PNP |
| IC(max) | 50 milliamps |
| VCEO | 60 volts |
