Microsemi Corp. Bipolar Transistors - BJT Jantxv2N3810/TR

PNP silicon dual transistor in a TO-78 package, designed for general-purpose amplification and switching applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current limit of 50 mAdc, and a total power dissipation of 200 mW for one section or 350 mW for both sections at +25°C. The device operates over a junction temperature range of -65°C to +200°C and meets MIL-PRF-19500/336 qualification standards. Forward current transfer ratio ranges from 100 to 450 depending on collector current and variant, with collector-emitter saturation voltage up to 0.25 Vdc and base-emitter saturation voltage up to 0.8 Vdc.