Microsemi Corp. Bipolar Transistors - BJT Jantxv2N3715

NPN high-power silicon transistor for military and aerospace applications, qualified to MIL-PRF-19500/408 and designated JANTXV. Housed in a TO-3 (TO-204AA) package. Maximum collector-emitter voltage is 60 Vdc, collector-base voltage is 80 Vdc, and emitter-base voltage is 7.0 Vdc. Continuous collector current is 10 Adc with total power dissipation of 5.0 W at 25°C, derating at 28.57 mW/°C above 25°C. Junction temperature range is -65°C to +200°C. Thermal resistance junction-to-case is 1.17 °C/W. DC current gain ranges from 50 to 150 at 1.0 Adc collector current and 2.0 Vdc collector-emitter voltage. Collector-emitter saturation voltage is 1.0 Vdc at 5.0 Adc collector current and 0.5 Adc base current. Output capacitance is 500 pF at 10 Vdc and 1.0 MHz.