Microsemi Corp. Bipolar Transistors - BJT Jantxv2N3700UB/TR

The Jantxv2N3700UB/TR is a military-qualified, ceramic surface mount NPN silicon transistor for high-reliability applications. It is rated for a collector-emitter voltage of 80 V, collector-base voltage of 140 V, and emitter-base voltage of 7.0 V, with a continuous collector current of 1.0 A and total power dissipation of 0.5 W at 25 °C. Thermal impedance is 325 °C/W junction-to-ambient and 90 °C/W junction-to-solder-pad. Current gain ranges from 15 to 300 depending on collector current, with a collector-emitter saturation voltage of 0.2 V to 0.5 V. The device has a case weight under 0.04 grams and is RoHS compliant when specified. It meets MIL-PRF-19500/391 qualifications for JANTXV level reliability.