Microsemi Corp. Bipolar Transistors - BJT Jantxv2N3700/TR

The Jantxv2N3700/TR is a low-power NPN silicon transistor in a hermetically sealed TO-18 package, qualified to JANTXV levels per MIL-PRF-19500/391 for high-reliability applications. It has a collector-emitter voltage rating of 80 V, collector-base voltage of 140 V, and emitter-base voltage of 7.0 V. The collector current is rated at 1.0 A, with total power dissipation of 0.5 W at 25 °C ambient temperature. Thermal impedance is 325 °C/W junction-to-ambient and 150 °C/W junction-to-case. The device has a minimum current gain of 15 at 1.0 A collector current and features an output capacitance of 12 pF and input capacitance of 60 pF. The package weighs approximately 0.3 grams and is nickel-plated with gold-plated terminations.