Microsemi Corp. Bipolar Transistors - BJT JANTXV2N3637UB/TR

The JANTXV2N3637UB/TR is a PNP silicon switching transistor in a surface mount TO-5 package, rated for a collector-emitter voltage of 175 Vdc, collector current of 1.0 Adc, and total power dissipation of 1.5 W at +25°C. It operates over a junction temperature range of -65 to +200°C. The device meets MIL-PRF-19500/357 qualification standards and is designed for high-reliability applications. Its forward current transfer ratio (hFE) ranges from 60 to 300 at 50 mA collector current and 10 V collector-emitter voltage. The minimum breakdown voltage (V(BR)CEO) is 175 Vdc, and the collector-emitter saturation voltage is 0.6 V at 50 mA collector and 5 mA base current. Input capacitance is 75 pF, output capacitance is 10 pF, and the noise figure is 3.0 dB at 1 kHz. Terminal configuration consists of emmitter, base, and collector with Pad 4 connected to the shielded lid.