Microsemi Corp. Bipolar Transistors - BJT JANTXV2N3501UB/TR

The JANTXV2N3501UB/TR is a radiation-hardened, high-reliability NPN silicon switching transistor in a low-profile ceramic surface-mount U4 package, weighing less than 0.04 grams. It is qualified to JANTXV level per MIL-PRF-19500/366 and RoHS compliant by design. The device has a collector-emitter voltage rating of 150 V, a collector current of 300 mA, and a total power dissipation of 1.5 W at 25 °C. Thermal resistance is 90 °C/W junction-to-solder-pad and 325 °C/W junction-to-ambient. Current gain ranges from 20 to 300 depending on collector current, with a collector-emitter saturation voltage of 0.4 V at 150 mA collector current. Switching times are 115 ns turn-on and 1150 ns turn-off. It meets military standards for high-reliability applications.