The JANTXV2N3501 is a military-qualified NPN silicon bipolar transistor for high-reliability and medium-power applications, available in a TO-205AD (TO-39) package with hermetically sealed kovar base and nickel cap. It has a collector-emitter voltage rating of 150 V, collector current of 300 mA, and maximum junction temperature of +200 °C. Thermal resistance is 30 °C/W from junction to case and 175 °C/W from junction to ambient. The device meets MIL-PRF-19500/366 qualifications and features a forward current gain (hFE) of 20 to 300 depending on collector current. It is qualified to JANTXV level and includes leaded or surface-mount variants, with RoHS compliance available only in commercial versions.
Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, SIMILAR TO TO-5, 3 PIN Product overview: JANTXV2N3501 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.3A, 150V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.3A, 150V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTXV2N3501 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTXV2N3501 |
| Product Name | 0.3A 150V Bipolar Transistor |
| IC(max) | 300 milliamps |
