Microsemi Corp. Bipolar Transistors - BJT Jantxv2N3500/TR

The JANTXV2N3500 is a military-grade NPN silicon transistor for high-reliability applications, housed in a TO-39 (TO-205AD) hermetically sealed package with a kovar base and nickel cap, weighing approximately 1.064 grams. It has a collector-emitter voltage rating of 150 V, a collector-base voltage of 150 V, a collector current of 300 mA, and a maximum power dissipation of 15 W at 25°C ambient. Thermal resistance is 30°C/W junction-to-case and 175°C/W junction-to-ambient. Its minimum current gain (hFE) is 15 at 300 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current. The device meets MIL-PRF-19500/366 JANTXV qualification and operates from -65°C to +200°C junction temperature.