Microsemi Corp. Bipolar Transistors - BJT JANTXV2N3498L/TR

The JANTXV2N3498L/TR is a military-qualified NPN silicon transistor from the 2N3498L series, designed for high-reliability and medium-power applications requiring high-frequency switching. It is packaged in a long-lead TO-5 (TO-205AA) hermetically sealed case with a kovar base and nickel-plated leads. The device has a collector-emitter voltage rating of 100 V, a collector current of 500 mA, a maximum power dissipation of 1.5 W, and a thermal resistance junction-to-ambient of 175 °C/W. Operating and storage junction temperatures range from -65 °C to +200 °C. The transistor is qualified to JANTXV and MIL-PRF-19500/366 standards, with RoHS-compliant versions available only for commercial grade. Its forward current gain (hFE) ranges from 40 to 120 at 150 mA collector current and 10 V collector-emitter voltage. Turn-on time is 115 ns, and turn-off time is 1150 ns under specified conditions.