Microsemi Corp. Bipolar Transistors - BJT JANTXV2N3019S/TR

The JANTXV2N3019S/TR is a military-qualified NPN silicon transistor in a TO-39 (TO-205AD) hermetically sealed package with a kovar base and nickel cap, weighing approximately 1.064 grams. It has a collector-emitter voltage rating of 80 V, collector-base voltage of 140 V, and emitter-base voltage of 7.0 V, with a maximum collector current of 1.0 A and total power dissipation of 0.8 W at +25°C. Thermal resistance is 195°C/W junction-to-ambient and 30°C/W junction-to-case. It meets MIL-PRF-19500/391 qualification and is RoHS compliant by design. The part is designed for high-reliability and military applications.