Microsemi Corp. Bipolar Transistors - BJT Jantxv2N3019/TR

Description
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
Datasheet
Datasheet Summary
Powered by GS/AI

The JANTXV2N3019/TR is a military-qualified NPN silicon transistor in a TO-5 package, designed for high-reliability applications. It has a collector-emitter voltage rating of 80 V, a collector-base voltage of 140 V, and a collector current of 1.0 A. The total power dissipation is 0.8 W at 25 °C ambient temperature, with a thermal resistance junction-to-ambient of 195 °C/W. The device is hermetically sealed with a kovar base and nickel cap, weighs approximately 1.064 grams, and meets MIL-PRF-19500/391 qualification standards. The forward-current transfer ratio ranges from 15 to 300 depending on collector current. It is RoHS compliant by design.

Datasheet Summary
Powered by GS/AI

The JANTXV2N3019/TR is a military-qualified NPN silicon transistor in a TO-5 package, designed for high-reliability applications. It has a collector-emitter voltage rating of 80 V, a collector-base voltage of 140 V, and a collector current of 1.0 A. The total power dissipation is 0.8 W at 25 °C ambient temperature, with a thermal resistance junction-to-ambient of 195 °C/W. The device is hermetically sealed with a kovar base and nickel cap, weighs approximately 1.064 grams, and meets MIL-PRF-19500/391 qualification standards. The forward-current transfer ratio ranges from 15 to 300 depending on collector current. It is RoHS compliant by design.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantxv2N3019/TR
Bipolar Transistors - BJT Jantxv2N3019/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantxv2N3019/TR
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data