Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2907AUB

PNP silicon small signal transistor in a TO-18 package, qualified to MIL-PRF-19500/291 at the JANTXV level, with a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. The device has an emitter-base voltage of 5.0 Vdc, collector-emitter saturation voltage of up to 1.6 V at 500 mA collector current and 50 mA base current, and forward current transfer ratio ranging from 50 to 300 dependent on bias conditions. Input and output capacitances are 30 pF and 8.0 pF respectively. The collector is internally connected to the case.