Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2907AUB/TR

The JANTXV2N2907AUB/TR is a PNP silicon small signal transistor in a TO-18 package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. It operates across a junction temperature range of -65°C to +200°C. The transistor meets MIL-PRF-19500/291 qualification standards. Current gain (hFE) ranges from 50 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 1.6 V at 500 mA collector current and 50 mA base current. Input capacitance is 30 pF, and output capacitance is 8.0 pF. Turn-on time is 45 μs and turn-off time is 300 μs under specified switching conditions. The collector is internally connected to the case, and the device is supplied in tape and reel packaging.