PNP silicon small signal transistor in a 3-pin TO-18 surface mount package, rated for 60 V collector-emitter voltage, 600 mA collector current, and 1.16 W total power dissipation. Operating and storage junction temperature range is -65 to +200 °C. Forward current transfer ratio (hFE) ranges from 40 to 450 depending on collector current. Collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 1.6 V at 500 mA. Base-emitter saturation voltage is 0.6 V at 150 mA and 2.6 V at 500 mA. Device is qualified per MIL-PRF-19500/291 and applicable to JANTXV quality level.
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Product overview: JANTXV2N2907AUA from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.6A, 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.6A, 60V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTXV2N2907AUA
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTXV2N2907AUA |
| Product Name | 0.6A 60V Bipolar Transistor |
| IC(max) | 600 milliamps |
