Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2907AUA

The JANTXV2N2907AUA is a PNP small signal silicon transistor in a surface-mount ceramic lid package, qualified to MIL-PRF-19500/291. It has a collector-emitter voltage rating of 60 Vdc, a collector current capability of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The device operates over a junction temperature range of -65 to +200°C. Forward current transfer ratio (hFE) ranges from 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 1.6 V at 500 mA collector current and 50 mA base current. Base-emitter saturation voltage is 2.6 V under the same conditions. Input capacitance is 30 pF, and output capacitance is 8.0 pF. The package is a 4-pad surface-mount configuration with an integrated shield connected to the ceramic lid.