Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2907AUA/TR

The Jantxv2N2907AUA/TR is a PNP silicon small signal transistor in a surface-mount package with a ceramic lid, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. The device operates over a junction temperature range of -65 to +200°C and meets MIL-PRF-19500/291 qualification standards. Electrical characteristics include a forward-current transfer ratio (hFE) of 100 to 450 at IC = 1.0 mA and VCE = 10 V, collector-emitter saturation voltage of 0.4 V at IC = 150 mA and IB = 15 mA, and input/output capacitances of 30 pF and 8.0 pF respectively. The package dimensions follow the TO-18 form factor with a 1.27 mm lead pitch and an overall height between 5.31 and 5.84 mm.