Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2907AL/TR

PNP silicon small signal transistor for general-purpose amplification and switching, housed in a TO-18 (TO-206AA) metal case with a diameter of 0.195 inch and height of 0.230 inch. It has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. The device operates within a junction temperature range of -65°C to +200°C and meets MIL-PRF-19500/291 qualification. Current gain (hFE) ranges from 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.4 V at 150 mA collector and 15 mA base current. Switching times include 45 μs turn-on and 300 μs turn-off under specified conditions.